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MSCSM120DHM31CTBL2NG Технические параметры

Microchip Technology  MSCSM120DHM31CTBL2NG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
Mfr Microchip Technology
Package Bulk
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 79A
Base Product Number MSCSM120
Vr - Reverse Voltage 1200 V
Vds - Drain-Source Breakdown Voltage 1.2 kV
Typical Turn-On Delay Time 30 ns
Vgs th - Gate-Source Threshold Voltage 1.8 V
Pd - Power Dissipation 310 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 10 V, + 25 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Screw Mounts
Manufacturer Microchip
Brand Microchip Technology / Atmel
Свойство продукта Значение свойства
Rds On - Drain-Source Resistance 31 mOhms
Typical Turn-Off Delay Time 50 ns
Id - Continuous Drain Current 79 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Type Asymmetrical Bridge SiC MOSFET Power Module
Subcategory Discrete Semiconductor Modules
Technology SiC
Configuration Asymmetrical Bridge
Power - Max 310W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 1200V
Product Type Discrete Semiconductor Modules
FET Feature Silicon Carbide (SiC)
Product Power MOSFET Modules
Vf - Forward Voltage 1.5 V at 30 A
Product Category Discrete Semiconductor Modules
Просмотр сходства
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