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Microchip Technology MSCSM120HM16T3AG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | - | |
Mfr | Microchip Technology | |
Package | Bulk | |
Product Status | Active | |
Current - Continuous Drain (Id) @ 25℃ | 173A (Tc) | |
Vds - Drain-Source Breakdown Voltage | 1200 V | |
Typical Turn-On Delay Time | 30 ns | |
Vgs th - Gate-Source Threshold Voltage | 1.8 V | |
Pd - Power Dissipation | 745 W | |
Transistor Polarity | N-Channel | |
Maximum Operating Temperature | + 175 C | |
Vgs - Gate-Source Voltage | - 10 V, 23 V | |
Minimum Operating Temperature | - 40 C | |
Factory Pack QuantityFactory Pack Quantity | 1 | |
Mounting Styles | Screw Mounts | |
Manufacturer | Microchip | |
Brand | Microchip Technology | |
Rds On - Drain-Source Resistance | 16 mOhms |
Свойство продукта | Значение свойства | |
---|---|---|
RoHS | Details | |
Typical Turn-Off Delay Time | 50 ns | |
Id - Continuous Drain Current | 173 A | |
Series | - | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Type | Full Bridge SiC MOSFET Power Module | |
Subcategory | Discrete Semiconductor Modules | |
Technology | SiC | |
Configuration | Full Bridge | |
Power - Max | 745W (Tc) | |
FET Type | 4 N-Channel (Full Bridge) | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 80A, 20V | |
Vgs(th) (Max) @ Id | 2.8V @ 6mA | |
Input Capacitance (Ciss) (Max) @ Vds | 6040pF @ 1000V | |
Gate Charge (Qg) (Max) @ Vgs | 464nC @ 20V | |
Rise Time | 30 ns | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Product Type | Discrete Semiconductor Modules | |
FET Feature | Silicon Carbide (SiC) | |
Product | Power MOSFET Modules | |
Product Category | Discrete Semiconductor Modules |