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MSMBJ70AE3 Технические параметры

Microchip Technology  MSMBJ70AE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package SMBJ (DO-214AA)
Diode Element Material SILICON
Number of Terminals 2Terminals
Mfr Microchip Technology
Product Status Active
Package Bulk
Base Product Number SMBJ70
Breakdown Voltage / V 77.8 V
Pd - Power Dissipation 1.38 W
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact -
Unit Weight 0.003527 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Ipp - Peak Pulse Current 5.3 A
Pppm - Peak Pulse Power Dissipation 600 W
Manufacturer Microchip
Brand Microchip Technology
RoHS Details
Vesd - Voltage ESD Air Gap -
Package Description R-PDSO-J2
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number MSMBJ7.0AE3
Power Dissipation (Max) 1.38 W
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Package Code DO-214AA
Risk Rank 5.58
Ihs Manufacturer MICROSEMI CORP
Part Life Cycle Code Active
Series Military, MIL-PRF-19500
Operating Temperature -65°C ~ 150°C (TJ)
Свойство продукта Значение свойства
Packaging Bulk
JESD-609 Code e3
Pbfree Code Yes
ECCN Code EAR99
Type Zener
Terminal Finish Matte Tin (Sn) - annealed
Applications General Purpose
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.50
Subcategory TVS Diodes / ESD Suppression Diodes
Technology AVALANCHE
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Pin Count 2
Termination Style SMD/SMT
JESD-30 Code R-PDSO-J2
Qualification Status Not Qualified
Operating Supply Voltage 70 V
Working Voltage 70 V
Polarity Unidirectional
Configuration SINGLE
Number of Channels 1 ChannelChannel
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Power Line Protection No
Voltage - Breakdown (Min) 77.8V
Power - Peak Pulse 600W
Current - Peak Pulse (10/1000μs) 5.3A
Voltage - Clamping (Max) @ Ipp 113V
Clamping Voltage 113 V
Voltage - Reverse Standoff (Typ) 70V
Unidirectional Channels 1
Product Type TVS Diodes
Rep Pk Reverse Voltage-Max 7 V
JEDEC-95 Code DO-214AA
Capacitance @ Frequency -
Non-rep Peak Rev Power Dis-Max 600 W
Breakdown Voltage-Min 7.78 V
Breakdown Voltage-Max 8.6 V
Product Category ESD Suppressors / TVS Diodes
MSMBJ70AE3 brand manufacturers: Microchip Technology, Anli stock, MSMBJ70AE3 reference price.Microchip Technology. MSMBJ70AE3 parameters, MSMBJ70AE3 Datasheet PDF and pin diagram description download.You can use the MSMBJ70AE3 TVS - Diodes, DSP Datesheet PDF, find MSMBJ70AE3 pin diagram and circuit diagram and usage method of function,MSMBJ70AE3 electronics tutorials.You can download from the Anli.