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- TVS - Diodes
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- MSMBJ7.5AE3
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MSMBJ7.5AE3 Технические параметры
Microchip Technology MSMBJ7.5AE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | TVS - Diodes | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AA, SMB | |
| Surface Mount | YES | |
| Supplier Device Package | SMBJ (DO-214AA) | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Mfr | Microchip Technology | |
| Package | Bulk | |
| Product Status | Active | |
| Base Product Number | SMBJ7.5 | |
| Breakdown Voltage / V | 83.3 V | |
| Pd - Power Dissipation | 1.38 W | |
| Maximum Operating Temperature | + 150 C | |
| Unit Weight | 0.003527 oz | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Ipp - Peak Pulse Current | 4.9 A | |
| Pppm - Peak Pulse Power Dissipation | 600 W | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology | |
| RoHS | Details | |
| Package Description | R-PDSO-J2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | MSMBJ7.5AE3 | |
| Power Dissipation (Max) | 1.38 W | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.57 | |
| Part Package Code | DO-214AA | |
| Series | Military, MIL-PRF-19500 | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Packaging | Bulk |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | Zener | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Applications | General Purpose | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.10.00.50 | |
| Subcategory | TVS Diodes / ESD Suppression Diodes | |
| Technology | AVALANCHE | |
| Terminal Position | DUAL | |
| Terminal Form | J BEND | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 2 | |
| Termination Style | SMD/SMT | |
| JESD-30 Code | R-PDSO-J2 | |
| Qualification Status | Not Qualified | |
| Operating Supply Voltage | 75 V | |
| Working Voltage | 75 V | |
| Polarity | Unidirectional | |
| Configuration | SINGLE | |
| Number of Channels | 1 ChannelChannel | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 8.33V | |
| Power - Peak Pulse | 600W | |
| Current - Peak Pulse (10/1000μs) | 46.5A | |
| Voltage - Clamping (Max) @ Ipp | 12.9V | |
| Clamping Voltage | 121 V | |
| Voltage - Reverse Standoff (Typ) | 7.5V | |
| Unidirectional Channels | 1 | |
| Product Type | TVS Diodes | |
| Rep Pk Reverse Voltage-Max | 7.5 V | |
| JEDEC-95 Code | DO-214AA | |
| Capacitance @ Frequency | - | |
| Non-rep Peak Rev Power Dis-Max | 600 W | |
| Breakdown Voltage-Min | 8.33 V | |
| Breakdown Voltage-Max | 9.21 V | |
| Product Category | ESD Suppressors / TVS Diodes |
Индекс :
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