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- MSMLJ10AE3
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MSMLJ10AE3 Технические параметры
Microchip Technology MSMLJ10AE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | TVS - Diodes | |
| Марка | ||
| Package / Case | DO-214AB-2 | |
| Mounting Type | Surface Mount | |
| Surface Mount | YES | |
| Supplier Device Package | DO-214AB | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| RoHS | Details | |
| Breakdown Voltage / V | 11.1 V | |
| Pppm - Peak Pulse Power Dissipation | 3 kW | |
| Vesd - Voltage ESD Contact | - | |
| Vesd - Voltage ESD Air Gap | - | |
| Ipp - Peak Pulse Current | 176.4 A | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 1.61 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 0.008818 oz | |
| Supplier Package | DO-214AB | |
| Peak Pulse Power Dissipation | 3000 W | |
| Direction Type | Uni-Directional | |
| Mounting | Surface Mount | |
| Package | Bulk | |
| Base Product Number | SMLJ10 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Package Description | R-PDSO-J2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | MSMLJ10AE3 | |
| Power Dissipation (Max) | 1.61 W | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.58 | |
| Part Package Code | DO-214AB | |
| Usage Level | Military grade |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | Bulk | |
| Operating Temperature | -65 to 150 °C | |
| Series | Military, MIL-PRF-19500 | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | Zener | |
| Terminal Finish | MATTE TIN | |
| Applications | General Purpose | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.10.00.50 | |
| Technology | AVALANCHE | |
| Terminal Position | DUAL | |
| Terminal Form | J BEND | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| Reference Standard | MIL-19500 | |
| Termination Style | SMD/SMT | |
| JESD-30 Code | R-PDSO-J2 | |
| Operating Supply Voltage | 10 V | |
| Working Voltage | 10 V | |
| Polarity | Unidirectional | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 11.1V | |
| Power - Peak Pulse | 3000W (3kW) | |
| Current - Peak Pulse (10/1000μs) | 176.4A | |
| Voltage - Clamping (Max) @ Ipp | 17V | |
| Clamping Voltage | 17 V | |
| Voltage - Reverse Standoff (Typ) | 10V | |
| Test Current | 1 mA | |
| Unidirectional Channels | 1 | |
| Rep Pk Reverse Voltage-Max | 10 V | |
| JEDEC-95 Code | DO-214AB | |
| Capacitance @ Frequency | - | |
| Screening Level | Military | |
| Non-rep Peak Rev Power Dis-Max | 3000 W | |
| ESD Protection | Yes | |
| Breakdown Voltage-Min | 11.1 V | |
| Breakdown Voltage-Max | 12.3 V |
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