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R2N2920A Технические параметры

Microchip Technology  R2N2920A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can
Supplier Device Package TO-78-6
Mfr Microchip Technology
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 30mA
Factory Pack QuantityFactory Pack Quantity 1
Manufacturer Microchip
Свойство продукта Значение свойства
Brand Microchip Technology
Series -
Operating Temperature -65°C ~ 200°C (TJ)
Power - Max 350mW
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition -
Product Category Microchip Technology
Просмотр сходства
R2N2920A brand manufacturers: Microchip Technology, Anli stock, R2N2920A reference price.Microchip Technology. R2N2920A parameters, R2N2920A Datasheet PDF and pin diagram description download.You can use the R2N2920A Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find R2N2920A pin diagram and circuit diagram and usage method of function,R2N2920A electronics tutorials.You can download from the Anli.