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Microchip Technology TC6320K6-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Factory Lead Time | 16 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-VDFN Exposed Pad | |
Number of Pins | 8Pins | |
Weight | 37.393021mg | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 20 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2013 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Terminal Position | DUAL | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 |
Свойство продукта | Значение свойства | |
---|---|---|
Base Part Number | TC6320 | |
Number of Channels | 2Channels | |
Operating Mode | ENHANCEMENT MODE | |
Turn On Delay Time | 10 ns | |
FET Type | N and P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 7 Ω @ 1A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 25V | |
Rise Time | 15ns | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Fall Time (Typ) | 15 ns | |
Continuous Drain Current (ID) | 5.2A | |
Drain-source On Resistance-Max | 7Ohm | |
Drain to Source Breakdown Voltage | 200V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Standard | |
Height | 1.37mm | |
Length | 4.89mm | |
Width | 3.91mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |