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TC6321T-V/9U Технические параметры
Microchip Technology TC6321T-V/9U technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 7 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2A Ta | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~175°C | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reference Standard | TS 16949 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-N8 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA, 2.4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 25V 200pF @ 25V | |
| Drain to Source Voltage (Vdss) | 200V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Drain-source On Resistance-Max | 7Ohm | |
| DS Breakdown Voltage-Min | 200V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |
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