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Microchip Technology TC8020K6-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Factory Lead Time | 17 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 56-VFQFN Exposed Pad | |
Number of Pins | 56Pins | |
Weight | 191.387631mg | |
Transistor Element Material | SILICON | |
Number of Elements | 6 Elements | |
Turn Off Delay Time | 20 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tray | |
Published | 2012 | |
JESD-609 Code | e4 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 56Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Position | QUAD |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Configuration | COMPLEX | |
Number of Channels | 12Channels | |
Operating Mode | ENHANCEMENT MODE | |
Turn On Delay Time | 10 ns | |
FET Type | 6 N and 6 P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 8 Ω @ 1A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
Rise Time | 15ns | |
Drain to Source Voltage (Vdss) | 200V | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Fall Time (Typ) | 15 ns | |
Drain-source On Resistance-Max | 8Ohm | |
Drain to Source Breakdown Voltage | -200V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Standard | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |