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TN5325N3-G-P002 Технические параметры

Microchip Technology  TN5325N3-G-P002 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Current - Continuous Drain (Id) @ 25℃ 215mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 740mW Ta
Turn Off Delay Time 25 ns
Packaging Tape & Reel (TR)
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Rise Time 15ns
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 215mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 7Ohm
Drain to Source Breakdown Voltage 250V
Feedback Cap-Max (Crss) 23 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
RoHS Status ROHS3 Compliant
Просмотр сходства

TN5325N3-G-P002 Документы

TN5325N3-G-P002 brand manufacturers: Microchip Technology, Anli stock, TN5325N3-G-P002 reference price.Microchip Technology. TN5325N3-G-P002 parameters, TN5325N3-G-P002 Datasheet PDF and pin diagram description download.You can use the TN5325N3-G-P002 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TN5325N3-G-P002 pin diagram and circuit diagram and usage method of function,TN5325N3-G-P002 electronics tutorials.You can download from the Anli.