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UM4306SM Технические параметры
Microchip Technology UM4306SM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Mount | Surface Mount | |
| Package / Case | SQ-MELF | |
| Surface Mount | YES | |
| Number of Pins | 2Pins | |
| Supplier Device Package | - | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| RoHS | N | |
| Maximum Diode Capacitance | 2.2 pF | |
| Maximum Series Resistance @ Maximum IF | 1.5 Ohms | |
| If - Forward Current | 100 mA | |
| Maximum Operating Frequency | 1 GHz | |
| Mounting Styles | SMD/SMT | |
| Carrier Life | 6 us | |
| Ir - Reverse Current | 10 uA | |
| Pd - Power Dissipation | 15 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Vr - Reverse Voltage | 600 V | |
| Package | Tape & Reel (TR) | |
| Mfr | Microchip Technology | |
| Power Dissipation (Max) | 15 W | |
| Product Status | Active | |
| Package Description | O-XELF-R2 | |
| Package Style | LONG FORM | |
| Package Body Material | UNSPECIFIED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | UM4306SM | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.62 | |
| Operating Temperature | - | |
| Series | - | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | Switching Pin Diodes | |
| Applications | ATTENUATOR | |
| Additional Feature | LOW DISTORTION | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | END | |
| Terminal Form | WRAP AROUND | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | O-XELF-R2 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Element Configuration | Single | |
| Diode Type | PIN - Single | |
| Power Dissipation | 15 W | |
| Case Connection | ISOLATED | |
| Capacitance @ Vr, F | 2.2pF @ 100V, 1MHz | |
| Reverse Voltage | 600 V | |
| Voltage - Peak Reverse (Max) | 600V | |
| Breakdown Voltage-Min | 600 V | |
| Reverse Test Voltage | 100 V | |
| Frequency Band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
| Diode Capacitance-Nom | 2.2 pF | |
| Resistance @ If, F | 1.5Ohm @ 100mA, 100MHz | |
| Diode Capacitance-Max | 2.2 pF | |
| Minority Carrier Lifetime-Nom | 6 µs | |
| Diode Res Test Current | 100 mA | |
| Diode Res Test Frequency | 100 MHz | |
| Diode Forward Resistance-Max | 1.5 Ω | |
| Radiation Hardening | No |
Индекс :
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