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VP2450N3-G Технические параметры

Microchip Technology  VP2450N3-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100mA Tj
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 740mW Ta
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position BOTTOM
Свойство продукта Значение свойства
Terminal Form WIRE
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Rise Time 25ns
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -500V
Feedback Cap-Max (Crss) 20 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

VP2450N3-G Документы

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