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- UMG3N-TP
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UMG3N-TP Технические параметры
Micro Commercial Co UMG3N-TP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Power - Max | 150mW | |
| Polarity/Channel Type | NPN | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | 250MHz | |
| Power Dissipation-Max (Abs) | 0.15W | |
| Resistor - Base (R1) | 4.7k Ω | |
| RoHS Status | RoHS Compliant |
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