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2N3856 Технические параметры
Micro Electronics Ltd 2N3856 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | MICRO ELECTRONICS LTD | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Transition Frequency-Nom (fT) | 140 MHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-92 | |
| Power Dissipation-Max (Abs) | 0.62 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 100 | |
| Collector-Emitter Voltage-Max | 18 V |
2N3856 Документы
- DatasheetsMCELD00005-3-9.pdf
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