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- M25P80-VMN6TPBA
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M25P80-VMN6TPBA Технические параметры
Micron M25P80-VMN6TPBA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Package Description | SOP, SOP8,.25 | |
| Package Style | SMALL OUTLINE | |
| Number of Words Code | 8000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | SOP8,.25 | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | M25P80-VMN6TPBA | |
| Clock Frequency-Max (fCLK) | 75 MHz | |
| Number of Words | 8388608 wordsWord | |
| Package Code | SOP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Micron Technology Inc | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Risk Rank | 7.59 | |
| Part Package Code | SON | |
| Usage Level | Automotive grade | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | NOR TYPE | |
| HTS Code | 8542.32.00.51 | |
| Subcategory | Flash Memories | |
| Technology | CMOS | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 1.27 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Power Supplies | 3/3.3 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 0.015 mA | |
| Organization | 8MX1 | |
| Seated Height-Max | 1.75 mm | |
| Memory Width | 1 | |
| Standby Current-Max | 0.00001 A | |
| Memory Density | 8388608 bit | |
| Screening Level | AEC-Q100 | |
| Parallel/Serial | SERIAL | |
| Memory IC Type | FLASH | |
| Programming Voltage | 2.7 V | |
| Serial Bus Type | SPI | |
| Endurance | 100000 Write/Erase Cycles | |
| Write Cycle Time-Max (tWC) | 15 ms | |
| Data Retention Time-Min | 20 | |
| Write Protection | HARDWARE/SOFTWARE | |
| Width | 3.9 mm | |
| Length | 4.9 mm |
Индекс :
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