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- N25Q128A13E1240F
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N25Q128A13E1240F Технические параметры
Micron N25Q128A13E1240F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 24Terminals | |
| Package Description | TBGA, BGA24,5X5,40 | |
| Package Style | GRID ARRAY, THIN PROFILE | |
| Number of Words Code | 128000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | BGA24,5X5,40 | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | N25Q128A13E1240F | |
| Clock Frequency-Max (fCLK) | 108 MHz | |
| Number of Words | 134217728 wordsWord | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Package Code | TBGA | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Micron Technology Inc | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Risk Rank | 5.73 | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| Type | NOR TYPE | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Subcategory | Flash Memories | |
| Technology | CMOS |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 1 mm | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PBGA-B24 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Power Supplies | 3/3.3 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 0.02 mA | |
| Organization | 128MX1 | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 1 | |
| Standby Current-Max | 0.0001 A | |
| Memory Density | 134217728 bit | |
| Parallel/Serial | SERIAL | |
| Memory IC Type | FLASH | |
| Programming Voltage | 3 V | |
| Serial Bus Type | SPI | |
| Endurance | 100000 Write/Erase Cycles | |
| Data Retention Time-Min | 20 | |
| Write Protection | HARDWARE/SOFTWARE | |
| Width | 6 mm | |
| Length | 8 mm |
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