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NAND512R3A2BZA6E Технические параметры

Micron Technology   NAND512R3A2BZA6E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация USB Flash Drives
Марка
EU RoHS Compliant
ECCN (US) 3A991.b.1.a
Automotive No
PPAP No
Cell Type SLC NAND
Chip Density (bit) 512M
Block Organization Symmetrical
Address Bus Width (bit) 27
Number of Bits/Word (bit) 8Bits/Word (bit)s
Number of Words 64MWord
Programmability Yes
Timing Type Asynchronous
Max. Access Time (ns) 15000
Maximum Erase Time (S) 0.003/Block
Maximum Page Access Time (ns) 50(Min)
Maximum Programming Time (ms) 0.5/Page
Interface Type Parallel
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.95
Operating Current (mA) 15
Свойство продукта Значение свойства
Program Current (mA) 15
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Command Compatible No
ECC Support Yes
Support of Page Mode Yes
Mounting Surface Mount
Package Height 0.7(Max)
Package Width 9
Package Length 11
PCB changed 63
Standard Package Name BGA
Supplier Package VFBGA
Lead Shape Ball
Packaging Tube
Part Status Unconfirmed
Pin Count 63
Architecture Sectored
Sector Size 16Kbyte x 4096
Page Size 256Words/512byte
Boot Block No
Просмотр сходства
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