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- MTA8ATF51264HZ-2G6B1
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MTA8ATF51264HZ-2G6B1 Технические параметры
Micron Technology Inc. MTA8ATF51264HZ-2G6B1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory - Modules | |
| Марка | ||
| Factory Lead Time | 5 Weeks | |
| Package / Case | 260-SODIMM | |
| Surface Mount | NO | |
| Memory Types | DDR4 SDRAM | |
| Operating Temperature (Max.) | 85°C | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 260Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AUTO/SELF REFRESH; WD-MAX | |
| Terminal Position | ZIG-ZAG | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Supply Voltage | 1.2V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XZMA-N260 | |
| Supply Voltage-Max (Vsup) | 1.26V | |
| Temperature Grade | OTHER | |
| Supply Voltage-Min (Vsup) | 1.14V | |
| Memory Size | 4GB | |
| Number of Ports | 1Port | |
| Speed | 2666MT/s | |
| Operating Mode | SYNCHRONOUS | |
| Organization | 512MX72 | |
| Memory Width | 72 | |
| Memory Density | 38654705664 bit | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Length | 69.6mm | |
| Height Seated (Max) | 30.13mm | |
| Width | 3.7mm | |
| RoHS Status | ROHS3 Compliant |
MTA8ATF51264HZ-2G6B1 Документы
- DatasheetsMTA8ATF51264HZ
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