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NAND01GW3B2CN6E Технические параметры

Micron Technology Inc.  NAND01GW3B2CN6E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Number of Pins 48Pins
Memory Types Non-Volatile
Operating Temperature -40°C~85°C TA
Packaging Tray
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48Terminations
ECCN Code 3A991.B.1.A
Terminal Finish Matte Tin (Sn)
HTS Code 8542.32.00.51
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Functions 1Function
Supply Voltage 3V
Terminal Pitch 0.5mm
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NAND01G-A
Pin Count 48
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3/3.3V
Свойство продукта Значение свойства
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 128M x 8
Nominal Supply Current 30mA
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 25ns
Address Bus Width 28b
Density 1 Gb
Standby Current-Max 0.00005A
Access Time (Max) 25000 ns
Sync/Async Asynchronous
Word Size 8b
Programming Voltage 3V
Write Cycle Time-Max (tWC) 25ms
Data Polling NO
Toggle Bit NO
Command User Interface YES
Number of Sectors/Size 1K
Sector Size 128K
Page Size 2kB
Ready/Busy YES
Length 18.4mm
Height Seated (Max) 1.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

NAND01GW3B2CN6E Документы

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