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NAND256W3A2BNXE Технические параметры

Micron Technology Inc.  NAND256W3A2BNXE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Number of Pins 48Pins
Memory Types Non-Volatile
Operating Temperature -40°C~85°C TA
Packaging Tray
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48Terminations
Terminal Finish MATTE TIN
Voltage - Rated DC 3.3V
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Functions 1Function
Supply Voltage 3V
Terminal Pitch 0.5mm
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NAND256
Свойство продукта Значение свойства
Operating Supply Voltage 3V
Voltage 3.3V
Memory Size 256Mb 32M x 8
Nominal Supply Current 20mA
Memory Format FLASH
Memory Interface Parallel
Organization 32MX8
Memory Width 8
Write Cycle Time - Word, Page 50ns
Address Bus Width 25b
Density 256 Mb
Standby Current-Max 0.00005A
Access Time (Max) 45 ns
Sync/Async Asynchronous
Word Size 8b
Data Polling NO
Toggle Bit NO
Command User Interface YES
Number of Sectors/Size 2K
Sector Size 16K
Page Size 528B
Ready/Busy YES
Length 18.4mm
Height Seated (Max) 1.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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NAND256W3A2BNXE Документы

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