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1N5616US/TR Технические параметры
Microsemi 1N5616US/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Microsemi | |
| ECCN (US) | EAR99 | |
| HTS | 8541.10.00.80 | |
| Maximum DC Reverse Voltage (V) | 440 | |
| Peak Reverse Repetitive Voltage (V) | 400 | |
| Maximum Continuous Forward Current (A) | 1@Ta=55C | |
| Peak Non-Repetitive Surge Current (A) | 30 | |
| Peak Forward Voltage (V) | 1.3@3A | |
| Peak Reverse Current (uA) | 0.5 | |
| Peak Reverse Recovery Time (ns) | 2000 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 200 | |
| AEC Qualified | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Standard Package Name | MELF | |
| Supplier Package | A-MELF | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 2.62(Max) | |
| Package Length | 5.08(Max) | |
| Package Width | 2.62(Max) | |
| PCB changed | 2 | |
| Lead Shape | No Lead | |
| Packaging | Tape and Reel | |
| Type | Switching Diode | |
| Pin Count | 2 | |
| Configuration | Single | |
| RoHS Status | RoHS non-compliant |
1N5616US/TR Документы
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