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GRP-ABC-JAN1N5417 Технические параметры

Microsemi  GRP-ABC-JAN1N5417 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 220
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 3@Ta=55C
Peak Non-Repetitive Surge Current (A) 80
Peak Forward Voltage (V) 1.5@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 150
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Свойство продукта Значение свойства
AEC Qualified No
Standard Package Name Case E
Supplier Package Case E
Mounting Through Hole
Package Length 4.7(Max)
PCB changed 2
Lead Shape Through Hole
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 3.42(Max)
RoHS Status RoHS non-compliant

GRP-ABC-JAN1N5417 Документы

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