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GRP-ABC-JAN1N5617 Технические параметры

Microsemi  GRP-ABC-JAN1N5617 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 440
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.6@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 150
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Свойство продукта Значение свойства
AEC Qualified No
Standard Package Name Module
Supplier Package Case A
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 2.16(Max)
RoHS Status RoHS non-compliant
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GRP-ABC-JAN1N5617 Документы

GRP-ABC-JAN1N5617 brand manufacturers: Microsemi, Anli stock, GRP-ABC-JAN1N5617 reference price.Microsemi. GRP-ABC-JAN1N5617 parameters, GRP-ABC-JAN1N5617 Datasheet PDF and pin diagram description download.You can use the GRP-ABC-JAN1N5617 Diodes - RF, DSP Datesheet PDF, find GRP-ABC-JAN1N5617 pin diagram and circuit diagram and usage method of function,GRP-ABC-JAN1N5617 electronics tutorials.You can download from the Anli.