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GRP-B-DATA-JAN1N5554US Технические параметры

Microsemi  GRP-B-DATA-JAN1N5554US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 1100
Peak Reverse Repetitive Voltage (V) 1000
Maximum Continuous Forward Current (A) 5
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.3@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Automotive No
Свойство продукта Значение свойства
Standard Package Name MELF
Supplier Package B-MELF
Mounting Surface Mount
Package Height 2.16(Max)
Package Length 4.95(Max)
Package Width 2.16(Max)
PCB changed 2
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
Просмотр сходства

GRP-B-DATA-JAN1N5554US Документы

GRP-B-DATA-JAN1N5554US brand manufacturers: Microsemi, Anli stock, GRP-B-DATA-JAN1N5554US reference price.Microsemi. GRP-B-DATA-JAN1N5554US parameters, GRP-B-DATA-JAN1N5554US Datasheet PDF and pin diagram description download.You can use the GRP-B-DATA-JAN1N5554US Diodes - RF, DSP Datesheet PDF, find GRP-B-DATA-JAN1N5554US pin diagram and circuit diagram and usage method of function,GRP-B-DATA-JAN1N5554US electronics tutorials.You can download from the Anli.