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JAN1N3070UR-1 Технические параметры

Microsemi  JAN1N3070UR-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum DC Reverse Voltage (V) 200
Peak Reverse Repetitive Voltage (V) 175
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) 1
Peak Reverse Current (uA) 0.1
Maximum Power Dissipation (mW) 500
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Свойство продукта Значение свойства
Supplier Temperature Grade Military
Standard Package Name SOD-80
Supplier Package DO-213AA
Mounting Surface Mount
Package Length 3.7(Max)
PCB changed 2
Lead Shape No Lead
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 1.7(Max)
RoHS Status RoHS non-compliant

JAN1N3070UR-1 Документы

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