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JAN1N5620/TR Технические параметры
Microsemi JAN1N5620/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Microsemi | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 880 | |
| Peak Reverse Repetitive Voltage (V) | 800 | |
| Maximum Continuous Forward Current (A) | 1@Ta=55C | |
| Peak Non-Repetitive Surge Current (A) | 30 | |
| Peak Forward Voltage (V) | 1.3@3A | |
| Peak Reverse Current (uA) | 0.5 | |
| Peak Reverse Recovery Time (ns) | 2000 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 200 | |
| Supplier Temperature Grade | Military |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Standard Package Name | Module | |
| Supplier Package | Case A | |
| Mounting | Through Hole | |
| Package Length | 6.35(Max) | |
| PCB changed | 2 | |
| Lead Shape | Through Hole | |
| Packaging | Bag | |
| Part Status | Active | |
| Type | Switching Diode | |
| Pin Count | 2 | |
| Configuration | Single | |
| Diameter | 2.16(Max) | |
| RoHS Status | RoHS non-compliant |
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