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JANS1N5420 Технические параметры

Microsemi  JANS1N5420 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 660
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 3@Ta=55C
Peak Non-Repetitive Surge Current (A) 80
Peak Forward Voltage (V) 1.5@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 400
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Automotive No
Свойство продукта Значение свойства
Standard Package Name Case E
Supplier Package Case E
Mounting Through Hole
Package Length 4.7(Max)
PCB changed 2
Lead Shape Through Hole
Packaging Tray
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 3.42(Max)
RoHS Status RoHS non-compliant

JANS1N5420 Документы

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