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JANS1N5420US Технические параметры

Microsemi  JANS1N5420US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 660
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 3@Ta=55C
Peak Non-Repetitive Surge Current (A) 80
Peak Forward Voltage (V) 1.5@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 400
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Свойство продукта Значение свойства
Standard Package Name MELF
Supplier Package E-MELF
Mounting Surface Mount
Package Height 3.76(Max)
Package Length 5.72(Max)
Package Width 3.76(Max)
PCB changed 2
Packaging Waffle
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
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JANS1N5420US Документы

JANS1N5420US brand manufacturers: Microsemi, Anli stock, JANS1N5420US reference price.Microsemi. JANS1N5420US parameters, JANS1N5420US Datasheet PDF and pin diagram description download.You can use the JANS1N5420US Diodes - RF, DSP Datesheet PDF, find JANS1N5420US pin diagram and circuit diagram and usage method of function,JANS1N5420US electronics tutorials.You can download from the Anli.