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JANS1N5614 Технические параметры

Microsemi  JANS1N5614 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 220
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.3@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Military
AEC Qualified No
Standard Package Name Module
Supplier Package Case A
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
Package Description HERMETIC SEALED, GLASS, A PACKAGE-2
Package Style LONG FORM
Package Body Material GLASS
Operating Temperature-Min -65 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 200 °C
Rohs Code No
Manufacturer Part Number JANS1N5614
Package Shape ROUND
Свойство продукта Значение свойства
Manufacturer Microsemi Corporation
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.97
Packaging Tray
JESD-609 Code e0
Pbfree Code No
Part Status Active
ECCN Code EAR99
Type Switching Diode
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position AXIAL
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Pin Count 2
Reference Standard MIL-19500
JESD-30 Code O-LALF-W2
Qualification Status Qualified
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 200 V
Reverse Recovery Time-Max 2 µs
Diameter 2.16(Max)
RoHS Status RoHS non-compliant

JANS1N5614 Документы

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