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JANS1N5618US Технические параметры

Microsemi  JANS1N5618US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 660
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.3@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Military
Standard Package Name MELF
Свойство продукта Значение свойства
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
Packaging Waffle
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
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JANS1N5618US Документы

JANS1N5618US brand manufacturers: Microsemi, Anli stock, JANS1N5618US reference price.Microsemi. JANS1N5618US parameters, JANS1N5618US Datasheet PDF and pin diagram description download.You can use the JANS1N5618US Diodes - RF, DSP Datesheet PDF, find JANS1N5618US pin diagram and circuit diagram and usage method of function,JANS1N5618US electronics tutorials.You can download from the Anli.