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JANTX1N5552US/TR Технические параметры
Microsemi JANTX1N5552US/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Microsemi | |
| ECCN (US) | EAR99 | |
| HTS | 8541.10.00.80 | |
| Maximum DC Reverse Voltage (V) | 660 | |
| Peak Reverse Repetitive Voltage (V) | 600 | |
| Maximum Continuous Forward Current (A) | 5 | |
| Peak Non-Repetitive Surge Current (A) | 100 | |
| Peak Forward Voltage (V) | 1.2@9A | |
| Peak Reverse Current (uA) | 1 | |
| Peak Reverse Recovery Time (ns) | 2000 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 175 | |
| Supplier Temperature Grade | Military |
| Свойство продукта | Значение свойства | |
|---|---|---|
| AEC Qualified | No | |
| Standard Package Name | MELF | |
| Supplier Package | B-MELF | |
| Mounting | Surface Mount | |
| Package Height | 2.16(Max) | |
| Package Length | 4.95(Max) | |
| Package Width | 2.16(Max) | |
| PCB changed | 2 | |
| Packaging | Tape and Reel | |
| Part Status | Unconfirmed | |
| Type | Switching Diode | |
| Pin Count | 2 | |
| Configuration | Single | |
| RoHS Status | RoHS non-compliant |
JANTX1N5552US/TR Документы
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