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- JANTXV1N5523DUR-1
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JANTXV1N5523DUR-1 Технические параметры
Microsemi JANTXV1N5523DUR-1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Single | |
| Марка | Microsemi | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Package Description | R-LELF-R2 | |
| Package Style | LONG FORM | |
| Package Body Material | GLASS | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Reference Voltage-Nom | 5.1 V | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | JANTXV1N5523DUR-1 | |
| Power Dissipation (Max) | 0.5 W | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.36 | |
| Part Package Code | DO-213AA | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | METALLURGICALLY BONDED | |
| HTS Code | 8541.10.00.50 | |
| Subcategory | Voltage Reference Diodes | |
| Technology | AVALANCHE | |
| Terminal Position | END | |
| Terminal Form | WRAP AROUND | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| Reference Standard | MIL-19500 | |
| JESD-30 Code | R-LELF-R2 | |
| Qualification Status | Qualified | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | ZENER DIODE | |
| Case Connection | ISOLATED | |
| Voltage Tol-Max | 1% | |
| JEDEC-95 Code | DO-213AA | |
| Working Test Current | 5 mA | |
| Dynamic Impedance-Max | 26 Ω |
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