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JANTXV1N6625US GRP C Технические параметры

Microsemi  JANTXV1N6625US GRP C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 1100
Peak Reverse Repetitive Voltage (V) 1000
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 15
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 80
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Military
Automotive No
Свойство продукта Значение свойства
Standard Package Name MELF
Supplier Package A-MELF
Mounting Surface Mount
Package Height 2.62(Max)
Package Length 5.08(Max)
Package Width 2.62(Max)
PCB changed 2
Lead Shape No Lead
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
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JANTXV1N6625US GRP C Документы

JANTXV1N6625US GRP C brand manufacturers: Microsemi, Anli stock, JANTXV1N6625US GRP C reference price.Microsemi. JANTXV1N6625US GRP C parameters, JANTXV1N6625US GRP C Datasheet PDF and pin diagram description download.You can use the JANTXV1N6625US GRP C Diodes - RF, DSP Datesheet PDF, find JANTXV1N6625US GRP C pin diagram and circuit diagram and usage method of function,JANTXV1N6625US GRP C electronics tutorials.You can download from the Anli.