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MRF5812R2 Технические параметры

Microsemi  MRF5812R2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Microsemi
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)
Mount Surface Mount
Package / Case SOIC
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 1.25W
Packaging Bulk
Published 2004
JESD-609 Code e0
Part Status Discontinued
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
Transition Frequency 5000MHz
Collector Base Voltage (VCBO) 30V
DC Current Gain-Min (hFE) 50
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Radiation Hardening No
RoHS Status Non-RoHS Compliant
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MRF5812R2 Документы

MRF5812R2 brand manufacturers: Microsemi, Anli stock, MRF5812R2 reference price.Microsemi. MRF5812R2 parameters, MRF5812R2 Datasheet PDF and pin diagram description download.You can use the MRF5812R2 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF5812R2 pin diagram and circuit diagram and usage method of function,MRF5812R2 electronics tutorials.You can download from the Anli.