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UES1103E3 Технические параметры

Microsemi  UES1103E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 150
Maximum Continuous Forward Current (A) 2.5
Peak Non-Repetitive Surge Current (A) 35
Peak Forward Voltage (V) 0.975@2A
Peak Reverse Current (uA) 2
Peak Reverse Recovery Time (ns) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Automotive No
Свойство продукта Значение свойства
Standard Package Name Module
Supplier Package Case A
Military No
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 2.16(Max)
RoHS Status RoHS non-compliant

UES1103E3 Документы

UES1103E3 brand manufacturers: Microsemi, Anli stock, UES1103E3 reference price.Microsemi. UES1103E3 parameters, UES1103E3 Datasheet PDF and pin diagram description download.You can use the UES1103E3 Diodes - RF, DSP Datesheet PDF, find UES1103E3 pin diagram and circuit diagram and usage method of function,UES1103E3 electronics tutorials.You can download from the Anli.