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UES1103/TR Технические параметры
Microsemi UES1103/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Microsemi | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 150 | |
| Maximum Continuous Forward Current (A) | 2.5 | |
| Peak Non-Repetitive Surge Current (A) | 35 | |
| Peak Forward Voltage (V) | 0.975@2A | |
| Peak Reverse Current (uA) | 2 | |
| Peak Reverse Recovery Time (ns) | 25 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 175 | |
| Automotive | No | |
| Standard Package Name | Module |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supplier Package | Case A | |
| Military | No | |
| Mounting | Through Hole | |
| Package Length | 6.35(Max) | |
| PCB changed | 2 | |
| Lead Shape | Through Hole | |
| Packaging | Tape and Reel | |
| Type | Switching Diode | |
| Pin Count | 2 | |
| Configuration | Single | |
| Diameter | 2.16(Max) | |
| RoHS Status | RoHS non-compliant |
UES1103/TR Документы
- datasheetsmicrosemi-ues1103tr-datasheets-2315.pdf
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