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UES1106E3 Технические параметры

Microsemi  UES1106E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
HTS 8541.10.00.80
Peak Reverse Repetitive Voltage (V) 400(Min)
Maximum Continuous Forward Current (A) 2
Peak Non-Repetitive Surge Current (A) 20
Peak Forward Voltage (V) 1.25
Peak Reverse Current (uA) 10
Maximum Power Dissipation (mW) 2500
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
AEC Qualified No
Supplier Package Case A
Military No
Mounting Through Hole
Package Length 3.2
PCB changed 2
Lead Shape Through Hole
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 2
RoHS Status RoHS Compliant
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UES1106E3 Документы

UES1106E3 brand manufacturers: Microsemi, Anli stock, UES1106E3 reference price.Microsemi. UES1106E3 parameters, UES1106E3 Datasheet PDF and pin diagram description download.You can use the UES1106E3 Diodes - RF, DSP Datesheet PDF, find UES1106E3 pin diagram and circuit diagram and usage method of function,UES1106E3 electronics tutorials.You can download from the Anli.