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UES1106TR Технические параметры

Microsemi  UES1106TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 400(Min)
Maximum Continuous Forward Current (A) 2
Peak Non-Repetitive Surge Current (A) 20
Peak Forward Voltage (V) 1.25
Peak Reverse Current (uA) 10
Maximum Power Dissipation (mW) 2500
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Automotive No
Свойство продукта Значение свойства
Standard Package Name Module
Supplier Package Case A
Military No
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
Packaging Tape and Reel
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 2.16(Max)
RoHS Status RoHS non-compliant
Просмотр сходства

UES1106TR Документы

UES1106TR brand manufacturers: Microsemi, Anli stock, UES1106TR reference price.Microsemi. UES1106TR parameters, UES1106TR Datasheet PDF and pin diagram description download.You can use the UES1106TR Diodes - RF, DSP Datesheet PDF, find UES1106TR pin diagram and circuit diagram and usage method of function,UES1106TR electronics tutorials.You can download from the Anli.