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UFT20010 Технические параметры

Microsemi  UFT20010 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Microsemi
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 200
Peak Non-Repetitive Surge Current (A) 1500
Peak Forward Voltage (V) 0.975@100A
Peak Reverse Current (uA) 50
Peak Reverse Recovery Time (ns) 60
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Supplier Package Twin Tower
Свойство продукта Значение свойства
Military No
Mounting Screw
Package Height 16(Max) - 0.25(Min)
Package Length 92.2(Max)
Package Width 20.32(Max)
PCB changed 3
Part Status Obsolete
Type Switching Diode
Pin Count 3
Configuration Dual Common Cathode
RoHS Status RoHS Compliant
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UFT20010 Документы

UFT20010 brand manufacturers: Microsemi, Anli stock, UFT20010 reference price.Microsemi. UFT20010 parameters, UFT20010 Datasheet PDF and pin diagram description download.You can use the UFT20010 Diodes - RF, DSP Datesheet PDF, find UFT20010 pin diagram and circuit diagram and usage method of function,UFT20010 electronics tutorials.You can download from the Anli.