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1090MP Технические параметры
Microsemi Corporation 1090MP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 20 Weeks | |
| Contact Plating | Tin | |
| Mount | Chassis Mount, Surface Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | 55FW-1 | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 65V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 200°C TJ | |
| Packaging | Bulk | |
| Published | 2009 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 250W | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Pin Count | 4 | |
| Configuration | SINGLE | |
| Power Dissipation | 250W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 65V | |
| Max Collector Current | 6.5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 500mA 5V | |
| Gain | 8.08dB ~ 8.5dB | |
| Frequency - Transition | 1.025GHz~1.15GHz | |
| Emitter Base Voltage (VEBO) | 3.5V | |
| Highest Frequency Band | L B | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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