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1N6622US Технические параметры

Microsemi Corporation  1N6622US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 17 Weeks
Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications ULTRA FAST RECOVERY
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 660V
Voltage - Forward (Vf) (Max) @ If 1.4V @ 1.2A
Case Connection ISOLATED
Forward Current 1.2A
Operating Temperature - Junction -65°C~150°C
Forward Voltage 1.6V
Max Reverse Voltage (DC) 660V
Average Rectified Current 1.2A
Number of Phases 1Phase
Reverse Recovery Time 30 ns
Peak Reverse Current 500nA
Max Repetitive Reverse Voltage (Vrrm) 660V
Capacitance @ Vr, F 10pF @ 10V 1MHz
Peak Non-Repetitive Surge Current 20A
Natural Thermal Resistance 13 °C/W
Radiation Hardening Yes
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

1N6622US Документы

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