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1N6630 Технические параметры

Microsemi Corporation  1N6630 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 17 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case A, Axial
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications ULTRA FAST RECOVERY
Additional Feature METALLURGICALLY BONDED, HIGH RELIABILITY
Свойство продукта Значение свойства
HTS Code 8541.10.00.80
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 990V
Voltage - Forward (Vf) (Max) @ If 1.4V @ 1.4A
Case Connection ISOLATED
Forward Current 1.4A
Operating Temperature - Junction -65°C~150°C
Forward Voltage 1.7V
Max Reverse Voltage (DC) 990V
Average Rectified Current 1.4A
Number of Phases 1Phase
Reverse Recovery Time 50 ns
Max Repetitive Reverse Voltage (Vrrm) 990V
Capacitance @ Vr, F 40pF @ 10V 1MHz
Peak Non-Repetitive Surge Current 75A
RoHS Status Non-RoHS Compliant

1N6630 Документы

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