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1N6630US Технические параметры

Microsemi Corporation  1N6630US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 17 Weeks
Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case E-MELF
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications HIGH VOLTAGE ULTRA FAST RECOVERY
Additional Feature METALLURGICALLY BONDED
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 4μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A
Case Connection ISOLATED
Forward Current 1.4A
Operating Temperature - Junction -65°C~150°C
Output Current-Max 3A
Forward Voltage 1.7V
Max Reverse Voltage (DC) 900V
Average Rectified Current 1.4A
Number of Phases 1Phase
Reverse Recovery Time 50 ns
Max Repetitive Reverse Voltage (Vrrm) 990V
Peak Non-Repetitive Surge Current 75A
RoHS Status Non-RoHS Compliant

1N6630US Документы

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