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2N2219 Технические параметры
Microsemi Corporation 2N2219 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | |
| Factory Lead Time | 22 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-39 (TO-205AD) | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Current-Collector (Ic) (Max) | 800mA | |
| Operating Temperature | -55°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| Part Status | Discontinued |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 800mW | |
| Power - Max | 800mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 1.6V | |
| Max Collector Current | 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 10nA | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Collector Base Voltage (VCBO) | 60V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
2N2219 Документы
- Datasheets2N2218-19(A,AL)
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