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2N2369A Технические параметры

Microsemi Corporation  2N2369A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 12 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Свойство продукта Значение свойства
Max Power Dissipation 360mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Configuration SINGLE
Power Dissipation 360mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Transition Frequency 500MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4.5V
VCEsat-Max 0.45 V
Collector-Base Capacitance-Max 4pF
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

2N2369A Документы

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