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2N2857UB Технические параметры
Microsemi Corporation 2N2857UB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 22 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, No Lead | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | TIN LEAD | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Pin Count | 3 | |
| Configuration | SINGLE | |
| Power Dissipation | 200mW | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 15V | |
| Max Collector Current | 40mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA 1V | |
| Gain | 21dB | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
2N2857UB Документы
- PCN Obsolescence/ EOL2N2857/UB OBS 18/May/2018
- Datasheets2N2857UB
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