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Microsemi Corporation 2N3811 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Arrays | |
Марка | ||
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-78-6 Metal Can | |
Number of Pins | 6Pins | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 60V | |
Number of Elements | 2 Elements | |
Operating Temperature | -65°C~200°C TJ | |
Packaging | Bulk | |
Published | 2007 | |
JESD-609 Code | e0 | |
Pbfree Code | no | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | TIN LEAD | |
HTS Code | 8541.21.00.95 |
Свойство продукта | Значение свойства | |
---|---|---|
Max Power Dissipation | 350mW | |
Terminal Position | BOTTOM | |
Terminal Form | WIRE | |
Pin Count | 8 | |
JESD-30 Code | O-MBCY-W8 | |
Configuration | SEPARATE, 2 ELEMENTS | |
Power - Max | 350mW | |
Transistor Application | AMPLIFIER | |
Polarity/Channel Type | PNP | |
Transistor Type | 2 PNP (Dual) | |
Collector Emitter Voltage (VCEO) | 250mV | |
Max Collector Current | 50mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 5V | |
Current - Collector Cutoff (Max) | 10μA ICBO | |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA | |
Transition Frequency | 100MHz | |
Collector Base Voltage (VCBO) | 60V | |
Radiation Hardening | No | |
RoHS Status | Non-RoHS Compliant |