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2N3866A Технические параметры
Microsemi Corporation 2N3866A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Power Dissipation | 1W | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Frequency | 800MHz | |
| Configuration | SINGLE | |
| Power Dissipation | 1W | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 400mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA 5V | |
| Frequency - Transition | 400MHz | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 3.5V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
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