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2N5680 Технические параметры

Microsemi Corporation  2N5680 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 12 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 120V
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 1W
Свойство продукта Значение свойства
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE
Voltage 120V
Current 1A
Power Dissipation 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA 2V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 4V
RoHS Status Non-RoHS Compliant

2N5680 Документы

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