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2N6673 Технические параметры
Microsemi Corporation 2N6673 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Lead, Tin | |
| Mount | Through Hole | |
| Package / Case | TO-3 | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Power Dissipation | 150W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 2 | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Configuration | Single | |
| Power Dissipation | 150W | |
| Collector Emitter Voltage (VCEO) | 400V | |
| Max Collector Current | 8A | |
| Transition Frequency | 15MHz | |
| DC Current Gain-Min (hFE) | 10 | |
| RoHS Status | Non-RoHS Compliant |
Индекс :
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